class: center, middle # EE-463 STATIC POWER CONVERSION-I # Power Semiconductor Devices ## Ozan Keysan ## [keysan.me](http://keysan.me) ### Office: C-113
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Tel: 210 7586 --- # Diode
--- # Power Diode (>50 A)
--- # Ideal Diode
--- # Ideal Diode ## V-I Characteristics --
--- # Practical Diode ## Important Parameters -- - ## Forward Voltage -- - ## Reverse Break-down Voltage -- - ## On-resistance -- - ## Turn-on, turn-off times (forward, reverse-recovery) --- # Practical Diode: V-I Characteristics
--- # A few Data-sheets - ### [STTH6012, 1200V, 60A Diode](https://www.st.com/en/diodes-and-rectifiers/stth6012.html) - ### [FERD20S100S, 100V, 20 A Diode](https://www.st.com/content/st_com/en/products/diodes-and-rectifiers/field-effect-rectifiers/ferd20s100s.html) --- ## Reverse Biased Diode
### [More info](http://ecee.colorado.edu/~ecen5797/course_material/Ch4slides.pdf) #### Eriksson, Fundamentals of Power Electronics, Ch4 --- ## Forward Biased Diode
### [More info](http://ecee.colorado.edu/~ecen5797/course_material/Ch4slides.pdf) #### Eriksson, Fundamentals of Power Electronics, Ch4 --- # Diode Switching Waveforms ## Turn-on transient
--- # Diode Switching Waveforms ## Turn-off transient
--- # Diode Switching Waveforms ## Turn-off transient
### Reverse current is required to remove carrier charges --- # Reverse Recovery ### Diode conducts a reverse current during turn-off
### \\(t\_{rr}\\): Reverse recovery time, \\(I\_{rr}\\): Reverse recovery current --- # Reverse Recovery
### [Softness Factor](https://www.allaboutcircuits.com/technical-articles/a-review-on-power-semiconductor-devices/) ### [Reverse recovery](https://electronics.stackexchange.com/questions/13912/what-is-the-reverse-recovery-time-in-a-diode) ### [Fast diode vs Slow Diode](https://www.circuitlab.com/circuit/jyymtc/diode-reverse-recovery-time-demo/) --- # Types of Power Diodes -- - ## Standard Recovery -- - ## Fast (ultra-fast) Recovery -- - ## [Schottky Diode](https://www.youtube.com/watch?v=GtH8lAzQf2A) - ### Majority carrier (due to metal layer) - ### No recovered charge, \\(t\_{rr}=0\\) - ### Limited to low voltage (<100V) --- # Types of Power Diodes --
-- ### What is the relation between \\(V\_{max}\\) and \\(V\_{F}\\)? --- # Losses -- # Conduction Losses -- - ## Increases with current -- # Switching Losses -- - ## Increases with turn-on, turn-off-time -- - ## Increases with switching frequency --- # Switching Losses ## Linearized
--- # Losses ## Extra Reading Material - ### [Fast, Faster, Fastest](http://www.ixys.com/Documents/AppNotes/IXAN0060.pdf) - ### [Power Losses, Thermal Considerations](http://www.irf.com/electronics/power-losses) - ### [Calculation of conduction losses in a power rectifier](http://www.st.com/content/ccc/resource/technical/document/application_note/d6/8b/bb/1b/a8/b4/4d/c6/CD00003894.pdf/files/CD00003894.pdf/jcr:content/translations/en.CD00003894.pdf) --- # Thyristor --
## A diode with a gate terminal! --- # Thyristor
-- ## Four layer PNPN semiconductor (and two-transistor equivalent circuit) --- # Thyristor
## A diode that you can delay on-state with gate signal(pulse) -- ## but no control while turning-off --- # Thyristor
--- # Thyristor
--- # Thyristor: Controlled Rectifier --
### More on thyristor rectifiers next week! --- # Thyristor -- - ### Has the highest current and voltage rating among other devices -- - ### Slow switching device (eg compared to MOSFET) -- - ### Latching switch (can be turned on by Ig, but cannot be turned off) --- # Thyristor ## V-I Characteristics - ### Reverse Blocking - ### Forward Blocking - ### Forward Conducting --- ## V-I Characteristics
--- ## V-I Characteristics
--- # Types of Thyristors -- - ## SCR (Silicon Controlled Rectifier) -- - ## TRIAC, DIAC -- - ## GTO (Gate Turn-Off Tyhristor) --- # GTOs
--- # GTOs
### 4500 V, 3000 A GTO - ## Used at very [high power levels](https://www.dynexsemi.com/products/semiconductors/gate-turn-off-thyristors) --- # GTOs - ## Fully contrallable switch - ## Can be turned-on and turned-off - ## Turn-on achieved by positive current pulse - ## Turn-off achieved by negative current pulse --- # Types of Thyristors ## TRIAC - ## Bi-directional device - ## TRIACs can be triggered by positive or negative current --- # Types of Thyristors ## TRIAC: Two anti-parallel thyristors
--- # Datasheet Exercise - ## [50 A - 1200 V automotive grade SCR Thyristor](https://static6.arrow.com/aropdfconversion/2e54f9e722f9dd6bb7d560f02f504ec8ec2f1144/3054220324263675dm0013.pdf) --- # MOSFET -- ## Metal-Oxide Semiconductor Field-Effect Transistor --
--- # MOSFET
--- # MOSFET ## V-I Characteristics
### To be discussed more in detail throughout the semester --- # MOSFET ## Body Diode
### [Power MOSFET Basics](http://www.ixys.com/Documents/AppNotes/IXAN0061.pdf) ---
### Cgs: large, constant ### Cgd: small, highly nonlinear (aka Miller Capacitance) ### Cds: intermediate, nonlinear ---
-- - #### 1: Vgs is charging input capacitance - #### 2: At Vth, drain current starts to flow (Vds is still at source voltage) - #### 3: Miller plateu reached. ON resistance reduces but current has increased, thus dissipating power - #### 4: MOSFET is ON. ON resistance is minimum (there is still conduction losses) [More info](https://www.nutsvolts.com/questions-and-answers/mosfet-basics), [Power MOSFET Basics](https://www.infineon.com/dgdl/mosfet.pdf?fileId=5546d462533600a4015357444e913f4f) --- ## MOSFET Comparison
--- ## MOSFET -- - ### Fast device (ten to hundreds kHz) -- - ### Easy to drive -- - ### Blocking voltage is usually <500 V -- - ### Positive Temperature coefficient (easy to parallel) -- - ### Body diode can conduct the full rated current (but usually slow) -- - ### Switching time determined by charging/discharging gate capacitors --- # IGBT -- ## Insulated-Gate Bipolar Transistor --
--- # IGBT
### [IGBT](https://www.youtube.com/watch?v=3HDzqDZaprE) ### [IGBT, when to use them?](https://www.youtube.com/watch?v=RxRJW09A_XA) ### [IGBT or MOSFET?](https://www.youtube.com/watch?v=nxhvLEWa7R4) --- # IGBT -- - ## Slower compared to MOSFET (<20-30kHz) -- - ## Lower on-resistance -- - ## Can withstand higher voltages (upto 1700V) -- - ## Possible to parallel for new generations -- - ## Probably best choice for 500-1700V, kWs of applications --- # IGBT Comparison
### To be discussed more in detail throughout the semester --- # Data-Sheet Exercise - ### [IGBT, H series 1200 V, 40 A high speed](https://www.st.com/en/power-transistors/stgw40h120df2.html) --- ## Some New Transistor Technologies -- # GaN
### [Advancing power supply solutions through the promise of GaN](http://www.ti.com/lit/wp/sszy017/sszy017.pdf) ### [Power GaN Opens New Applications](http://www.power-mag.com/pdf/feature_pdf/1371723815_EPC_Feature_Layout_1.pdf) --- ## Some New Transistor Technologies # SiC
### [Next Generation Power Semiconductors: What is GaN / SiC?](http://www.semicon.sanken-ele.co.jp/en/guide/GaNSiC.html) --- ## Some New Transistor Technologies
--- ## You can download this presentation from: [keysan.me/ee463](http://keysan.me/ee463)